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SH8M70
Data Sheet
10
V DS =10V
Pulsed
5
4
V DS =10V
I D =1mA
2
1.8
1.6
V GS =10V
9V
8V
7V
6V
1
3
1.4
1.2
1
5V
0.1
Ta=-25 ° C
25 ° C
75 ° C
75 ° C
2
1
0.8
0.6
0.4
0.2
4V
0.01
0.01 0.1 1 10
Drain Current : I D (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
P-ch
? Electrical characteristic curves
0
-50 -25 0 25 50 75 100 125 150
Channel Temperature : Tch ( ° C)
Fig.11 Gate Threshold Voltage
vs. Channel Temperature
3V
0
0 2 4 6 8 10
Drain-Sourse Voltage : V DS (V)
Fig.12 Typical Output Characteristics
1000
100
Ciss
10000
1000
tf
Ta=25 ° C
V DD = ? 125V
V GS = ? 10V
R G =10 Ω
Pulsed
15
10
Coss
100
td(off)
10
Crss
td(on)
5
1
f=1MHz
V GS =0V
Ta=25 ° C
Pulsed
0.01 0.1
1
10
100
1000
10
1
0.01
0.1
1
tr
10
0
0
1
2
3
4
5
6
7
Ta=25 ° C
V DD = ? 125V
I D = ? 2.5A
Pulsed
8 9 10
Drain-Source Voltage : -V DS (V)
Drain Current : -I D (A)
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
Fig.2 Switching Characteristics
Total Gate Charge : Qg(nC)
Fig.3 Dynamic Input Characteristics
10
V DS =-10V
Pulsed
10
9
10
8
1
7
6
5
1
0.1
Ta=-25 ° C
25 ° C
75 ° C
125 ° C
4
3
2
I D =-2.5A
-1.25A
Ta=-25 ° C
25 ° C
75 ° C
125 ° C
0.01
0
2
4
6
8
1 Ta=25 ° C
Pulsed
0
0 5
10
15
20
0.1
V GS =0V
Pulsed
0 0.2
0.4
0.6
0.8
1
1.2
Gate-Source Voltage : ? V GS (V)
Fig.4 Typical Transfer Characteristics
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Gate-Source Voltage : -V GS (V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
5/7
Source-Drain Voltage : -V SD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
2010.06 - Rev.B
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